The fracture strength of plate and tubular forms of monolithic silicon carbide (SiC) produced by chemical vapor deposition (CVD)
The fracture strength of silicon carbide (SiC) plate deposits produced by Chemical Vapor Deposition (CVD) was determined from room-temperature to 1500 C using a standard 4-point flexural test method (ASTM Cl 161). CVD SiC materials produced by two different manufacturers are shown to have only slightly different flexural strength values, which appear to result from differences in microstructure. Although CVD deposition of SiC results in a textured grain structure, the flexural strength was shown to be independent of the CVD growth direction. The orientation of machining marks was shown to have the most significant influence on flexural strength, as expected. The fracture strength of tubular forms of SiC produced by CVD deposition directly onto a mandrel was comparable to flexural bars machined from a plate deposit. The tubular (o-ring) specimens were much smaller in volume than the flexural bars, and higher strength values are predicted based on Weibull statistical theory for the o-ring specimens. Differences in microstructure between the plate deposits and deposits made on a mandrel result in different flaw distributions and comparable strength values for the flexural bar and o-ring specimens. These results indicate that compression testing of o-rings provides a more accurate strength measurement for tubular product forms of SiC due to more representative flaw distributions.
- Research Organization:
- Bettis Atomic Power Lab., West Mifflin, PA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC11-98PN38206
- OSTI ID:
- 774256
- Report Number(s):
- B-T-3327; TRN: AH200111%%19
- Resource Relation:
- Conference: Annual Meeting of The Minerals, Metals, and Materials Society, New Orleans, LA (US), 02/11/2001; Other Information: PBD: 1 Dec 2000
- Country of Publication:
- United States
- Language:
- English
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