Improvement of electronics reliability by rf sputtering techniques. Final report, 1 May 1975--1 May 1976

Technical Report · Sat May 01 00:00:00 EDT 1976

OSTI ID:7304707

Grantham, D H; Swindal, J L

Electromigration in rf sputtered films of aluminum-copper alloys was documented. Copper content was 1%, 8%, and 12% nominally. At less than 200 C and current densities of less than 3 million amps//sup 2/ the films with 1% copper exhibited significantly longer life than the films with higher copper content. Beryllium oxide was sputtered from a BeO target and reactively from a beryllium target. Constitutive stresses were reduced until the films deposited on silicon were dominated by thermal stresses. Heat-sinking with gallium proved to be extremely difficult in the presence of the activated oxygen species introduced during sputtering. Films approximately 0.001 inch thick were deposited on GaAs substrates without thermal stress cracking. Columnar growth of the beryllium oxide was observed in all cases.

• Research Organization: United Technologies Research Center, East Hartford, CT (USA)
• DOE Contract Number: N00019-75-C-0465
• OSTI ID: 7304707
• Report Number(s): AD-A-032441; UTRC/R-76-922139-4
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ALUMINIUM BASE ALLOYS
SPUTTERING
COPPER ALLOYS
BERYLLIUM
BERYLLIUM OXIDES
ELECTROPHORESIS
DEPOSITION
FILMS
SUBSTRATES
ALKALINE EARTH METAL COMPOUNDS
ALKALINE EARTH METALS
ALLOYS
ALUMINIUM ALLOYS
BERYLLIUM COMPOUNDS
CHALCOGENIDES
ELEMENTS
METALS
OXIDES
OXYGEN COMPOUNDS
640301* - Atomic
Molecular & Chemical Physics- Beams & their Reactions
360203 - Ceramics
Cermets
& Refractories- Mechanical Properties
360103 - Metals & Alloys- Mechanical Properties