Effects of oxidation and nitrogen annealing on ion-implantation-induced interface states in the silicon--silicon dioxide system

Journal Article · Tue Feb 01 00:00:00 EST 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323638· OSTI ID:7293201

Hess, D W; Learn, A J

Experiments designed to determine the effects of oxidation and nitrogen annealing on interface states created by argon implantation through thermally grown silicon dioxide films are described. Although these states could be inactivated by a 900/sup 0/C hydrogen anneal, they reappeared after short nitrogen or oxygen treatments at 1000/sup 0/C. Only oxidations which consumed at least 500 A of the implantation-damaged silicon surface completely eliminated the states. The oxidation rate of the implanted structures was found to be increased relative to that of the unimplanted controls. (AIP)

• Research Organization: Research and Development Laboratory, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304
• OSTI ID: 7293201
• Journal Information: J. Appl. Phys.; (United States), Vol. 48:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
SILICON OXIDES
ANNEALING
ARGON IONS
ELECTRONIC STRUCTURE
FILMS
HYDROGEN
INTERFACES
ION IMPLANTATION
NITROGEN
OXIDATION
OXYGEN
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL REACTIONS
CRYOGENIC FLUIDS
ELEMENTS
FLUIDS
HEAT TREATMENTS
IONS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMIMETALS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects