Heavy ions sensitivity of Power Mosfets Comportement des Mosfets de puissance sous ions lourds

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277517· OSTI ID:7289090

Tastet, P; Garnier, J ^[1]

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1. Center National d'Etudes Spatiales, 18 Avenue Edouard Belin, 31055 Toulouse Cedex (FR)

This paper reports on Power Mosfets which are now widely used in Space applications. Their electrical characteristics: high switching capability, easy gate control, low losses, allow large gain in efficiency and mass of on-board power supplies. However, their heavy ions sensitivity may restrict their application. In order to quantify this sensitivity, the authors have characterized two technologies (standard and rad-hard) under different accelerators. The authors have performed two types of experiment: irradiation of the Mosfet in the off-state, static mode; and irradiation of the Mosfet in a switching converter.

• OSTI ID: 7289090
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 39:3; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
RADIATION EFFECTS
ELECTRICAL PROPERTIES
HEAVY IONS
SENSITIVITY
SPACE
USES
CHARGED PARTICLES
FIELD EFFECT TRANSISTORS
IONS
MOS TRANSISTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)