Method for making defect-free zone by laser-annealing of doped silicon
This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates. 13 figs.
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 4181538; A
- Application Number:
- PPN: US 5-945925
- OSTI ID:
- 7256415
- Resource Relation:
- Patent File Date: 26 Sep 1978
- Country of Publication:
- United States
- Language:
- English
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Method for making defect-free zone by laser-annealing of doped silicon
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Related Subjects
SILICON
ANNEALING
ELECTRICAL PROPERTIES
DOPED MATERIALS
IRRADIATION
LASER RADIATION
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
MATERIALS
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)