Bistable vertical-cavity surface-emitting lasers. Annual report

Technical Report · Tue Jun 30 00:00:00 EDT 1992

OSTI ID:7252530

Deppe, D G

This work takes both theoretical and experimental paths in the study of how optical microcavities influence light emission from semiconductors. Computer simulation is used to guide the development of physical models for spontaneous and stimulated emission under the cavity influence, with experimental demonstrations used as tests of the models and to gain further insight. Initial experimental device results have demonstrated that bistability can be achieved in the VCSEL, but the source of the bistability has not been clearly defined as of yet in our experimental work. We have demonstrated the usefulness of our particular device design, as evidenced in our optical switching to achieve optical memory, described in Publications 1 and 6. An intriguing possibility for the source of the bistability lies in the details of an optically thin gain region and its placement in the Fabry-Perot microcavity. The bistability then might arise due to changes in the field overlap with the gain region when the device bias is increased from below lasing to above threshold.

• Research Organization: Texas Univ., Austin, TX (United States). Microelectronics Research Center
• OSTI ID: 7252530
• Report Number(s): AD-A-253123/4/XAB; CNN: N00014-91-J-1952
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
RESEARCH PROGRAMS
COMPUTERIZED SIMULATION
COMPUTERS
DESIGN
DIPOLES
HYSTERESIS
LASER CAVITIES
PROGRESS REPORT
STABILITY
SURFACES
DOCUMENT TYPES
LASERS
MULTIPOLES
SEMICONDUCTOR DEVICES
SIMULATION
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)