Radiation effects in a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors
- RCA Astro-Electronics Div., Princeton, NJ
This paper presents the results obtained from total dose and transient radiation tests on a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors. Samples were irradiated by cobalt-60 gamma rays under worst-case conditions, and by 10-MeV electron pulses of 50-ns and 4.4-..mu..s duration. Devices were fabricated with three different insulators; the two discussed here are standard wet oxide and a pyrogenic oxide. Test transistors on the D/A chips made it possible to diagnose the failure modes of the converter and to evaluate some special designs. These consisted of standard edge p- and n-channel transistors, edgeless units, edgeless tetrode transistors, and an edgeless type transmission gate with a diode clamp from substrate to gate. The total dose results indicate that the pyrogenic oxide increased the failure dose of the operational amplifier portion of the converter from 10/sup 3/ rads (Si) to 2 x 10/sup 6/ rads (Si); however, the sample and hold failed after exposure to a low level of 10/sup 3/ rads (Si). Test devices indicated this to be due to the radiation-induced leakage current of the transmission gate which discharges the sample and hold capacitor. The diode clamp decreased the threshold voltage shifts and the leakage currents. The edgeless devices improved the device performance because of a more abrupt turn-on. Narrow-pulse test data indicated that the edgeless units produced less photocurrent than the edge units by about a factor of three to four. Converter upset levels are less than or equal to 10/sup 9/ rads/s due to precision requirements which make a few millivolt transients untenable.
- OSTI ID:
- 7213060
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-23:6; Conference: IEEE annual conference on nuclear and space radiation effects, San Diego, CA, USA, 27 Jul 1976
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DIGITAL-TO-ANALOG CONVERTERS
PHYSICAL RADIATION EFFECTS
DESIGN
ELECTRONS
FABRICATION
FAILURES
GAMMA RADIATION
INTEGRATED CIRCUITS
LEAKAGE CURRENT
OPERATIONAL AMPLIFIERS
RADIATION HARDENING
TESTING
TRANSISTORS
AMPLIFIERS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
FERMIONS
HARDENING
IONIZING RADIATIONS
LEPTONS
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems