Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition

Journal Article · Mon Nov 16 00:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108179· OSTI ID:7203676

Friedmann, T A; McCarty, K F; Klaus, E J; Boehme, D; Clift, W M; Johnsen, H A; Mills, M J; Ottesen, D K ^[1]

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1. Sandia National Laboratories, Livermore, California 94551 (United States)

We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN(hBN) targets to form BN films. We have deposited BN films on heated (600 {degree}C) and room-temperature silicon (100) surface in an ambient background gas of N{sub 2}. Fourier transform infrared (FTIR) reflection spectroscopy indicates that the films grown at high temperature have short-range {ital sp}{sup 2} (hexagonal-like) order, whereas films grown at room temperature are a mixture of {ital sp}{sup 3}-bonded BN and {ital sp}{sup 2}-bonded BN. Electron diffraction confirms the presence of cubic BN (cBN) material in the films grown at low temperature and the corresponding TEM lattice images show a grain size of {similar to}200 A. The presence of cBN in the films correlates with laser energy density, with cubic material appearing around 2.4 mJ/cm{sup 2}. Auger electron spectroscopy (AES) indicates that the films are nitrogen deficient.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7203676
• Journal Information: Applied Physics Letters; (United States), Vol. 61:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
GROWTH
ABLATION
CHEMICAL BONDS
CHEMICAL COMPOSITION
CRYSTAL LATTICES
DEPOSITION
EXCIMER LASERS
FILMS
METASTABLE STATES
TEMPERATURE EFFECTS
BORON COMPOUNDS
CRYSTAL STRUCTURE
ENERGY LEVELS
EXCITED STATES
GAS LASERS
LASERS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
360601* - Other Materials- Preparation & Manufacture