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Title: Response of silicon detector for high energy x-ray computed tomography

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:7174871
; ; ;  [1]
  1. Hitachi, Ltd., Ibaraki (Japan). Energy Research Lab.

X-ray computed tomography (CT) has been widely used in industry as a tool for nondestructive evaluation (NDE). Industrial X-ray CT (ICT) provides cross-section images that allow the detection, location, and sizing of defects. The suitability of Si-SSD as a detector for high energy X-ray CT has been investigated. Two types of Si-SSDs which can take the place of ordinary scintillation detectors were proposed. Their predicted responses were compared with that of a CWO scintillation detector of almost the same dimensions by using the EGS4 Monte Carlo simulation code. The sensitivities of the sole-silicon detector and the metal-sandwiched detector were about ten times higher than that of the CWO scintillation detector was judged more useful than the sole Si-SSD when the width of X-ray beam was less than about 0.2 mm. Then the silicon semiconductor detector for high energy X-ray CT was fabricated and actual measurements of the depletion layer width and the electronic noise contribution were made.

OSTI ID:
7174871
Report Number(s):
CONF-931051-; CODEN: IETNAE
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4Pt1; Conference: NSS-MIC '93: nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 30 Oct - 6 Nov 1993; ISSN 0018-9499
Country of Publication:
United States
Language:
English