Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb(001) surfaces grown by molecular-beam epitaxy
- Laboratoire d'Etudes des Surfaces, Interfaces et Composants (UA CNRS D07870), Place Eugene Bataillon, 34095 Montpellier-Cedex 5, France (FR)
GaSb (001) surfaces were prepared by molecular-beam epitaxy. Auger electron spectroscopy (AES) and electron energy-loss spectroscopy (EELS) are reported for clean surfaces exposed to oxygen, and during the process the ionization gauge of the vacuum system is turned on. Successive stages of chemisorption can be distinguished. For oxygen coverage up to 0.5 monolayer, the surface states are saturated by bonding of the oxygen with Ga and Sb atoms. Sb atoms desorb causing significant Sb depletion in the first layer. Larger exposures further increase the coverage and induce, in the EELS spectra, losses related to O(2{ital p}) and O(2{ital s}) atomic states and new plasmon excitations. In the AES spectra the shift of Auger emission lines which are characteristic of Sb and Ga oxide forms appear; at coverages of about one monolayer back bonds break forming Sb{sub 2}O{sub 3} and Ga{sub 2}O{sub 3}. Further exposures to oxygen result in thicker oxide layers of Ga and Sb.
- OSTI ID:
- 7171117
- Journal Information:
- Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Vol. 8:1; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ANTIMONIDES
SURFACE PROPERTIES
MOLECULAR BEAM EPITAXY
OXIDATION
ADSORPTION
AUGER ELECTRON SPECTROSCOPY
CHEMISORPTION
PLASMONS
SEMICONDUCTOR MATERIALS
SORPTIVE PROPERTIES
VACUUM SYSTEMS
ANTIMONIDES
ANTIMONY COMPOUNDS
CHEMICAL REACTIONS
ELECTRON SPECTROSCOPY
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
PNICTIDES
QUASI PARTICLES
SEPARATION PROCESSES
SORPTION
SPECTROSCOPY
360604* - Materials- Corrosion
Erosion
& Degradation