Electron beam fabrication of prototype 100-bit 2. 6. mu. m magnetic bubble shift register buffer memories
The feasibility of fabricating small (approximately 100-bit) serial shift register bubble memories by using electron beam lithography and single-level permalloy field access pattern technology was investigated. The goal of this study was to build fully functional devices capable of generating, storing, shifting, and reading out data and to determine whether the fabrication process could be scaled up to produce very large capacity chips by direct electron beam exposure of the wafers. The bias field margin for full operation of the 100-bit 2.6-..mu..m bubble memory chip at 1 kHz is shown and discussed. The experiments indicated that it is possible to build and operate a 2.6-..mu..m serial bubble memory on a garnet substrate. 10/sup 7/-bit compact bubble memories can be anticipated. 5 figures. (RWR)
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- E(29-1)-789
- OSTI ID:
- 7125819
- Report Number(s):
- SAND-76-5421; CONF-761112-1
- Resource Relation:
- Conference: Government microcircuit applications conference, Lake Buena Vista, FL, USA, 9 Nov 1976
- Country of Publication:
- United States
- Language:
- English
Similar Records
Propagation in submicron ion-implanted magnetic-bubble computer memory devices
Material and submicron bubble device properties of (LuSm)$sub 3$Fe$sub 5$O$sub 12$