Solid state radiation detector and process
A radiation detector is described that combines the characteristics of high quantum efficiency in the uv spectrum with good ir transmission characteristcs so that it may be used in association with an ir sensor to produce a coaxial transducer suitable for use in association with unfiltered, high-resolution optics. The detector is a solid state photovoltaic Schottky barrier semi-conductor junction comprising a thin platinum layer laid over single-crystal cadmium sulfide. Processing, including lapping, polishing, and chemical etch, produces a surface suitable for providing radiation sensitivity which drops off sharply outside the ultraviolet spectrum beyond 550 nanometers. The platinum layer is approximately 35 angstroms in thickness and is therefore transparent both to ultraviolet and infrared radiation. The infrared radiation passes through the cadmium sulfide wafer and through a window in the indium ohmic contact surface on the second surface of the cadmium sulfide crystal. An infrared sensor positioned in association with this window will be exposed to up to 85 percent of the incident infrared radiation. 9 claims, 12 figures.
- Assignee:
- General Dynamics Corp.
- Patent Number(s):
- US 4000502
- OSTI ID:
- 7119581
- Resource Relation:
- Patent File Date: Filed date 5 Nov 1973
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM SULFIDES
PHOTOVOLTAIC EFFECT
PHOTOVOLTAIC CELLS
DESIGN
RADIATION DETECTORS
INFRARED RADIATION
CADMIUM COMPOUNDS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
INORGANIC PHOSPHORS
MEASURING INSTRUMENTS
PHOSPHORS
PHOTOELECTRIC CELLS
RADIATIONS
SULFIDES
SULFUR COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion