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Title: Growth mechanisms of layered superconductors

Conference ·
OSTI ID:7116123

Using a combination of Z-contrast imaging, scanning tunneling microscopy, and plan view diffraction contrast imaging, we have studied the growth and relaxation mechanisms of YBa{sub 2}Cu{sub 3}O{sub 7-x} deposited on MgO and SrTiO{sub 3} substrates. Two-dimensional island growth occurs on SrTiO{sub 3} substrates, with relaxation through the nucleation of dislocation half-loops. Then the threading dislocation segments with a screw component can lead to kinetic roughening through the development of growth pyramids. In contrast, growth on MgO occurs by true one-dimensional island growth (with no wetting layer), most of the interface being incommensurate with the substrate (although crystallographically aligned). Dislocations with both edge and screw components are generated on island coalescence. A highly anisotropic surface energy is shown to responsible for cell-by-cell c{perpendicular} growth being thermodynamically preferred, although at high supersaturations a transition a{perpendicular} growth occurs.

Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
7116123
Report Number(s):
CONF-920402-48; ON: DE92018492
Resource Relation:
Conference: Material Research Society spring meeting, San Francisco, CA (United States), 27 Apr - 2 May 1992
Country of Publication:
United States
Language:
English