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Title: Open-circuit voltage of vertical-junction photovoltaic devices at high intensity

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.90408· OSTI ID:7043576

Vertical single-junction silicon photovoltaic cells show a steady increase in open-circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm/sup 2/ (approx.1000 suns). Voltages as high as 0.76 V have been observed at 25 /sup 0/C with no apparent saturation of voltage at high intensity. Measurements are presented for cells of various base doping levels. An efficiency of 19.1% has been observed at 76 W/cm/sup 2/ and 25 /sup 0/C using an unfiltered xenon short-arc lamp for a nonoptimized cell.

Research Organization:
Department of and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
OSTI ID:
7043576
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 33:5
Country of Publication:
United States
Language:
English