Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

Journal Article · Tue Jun 01 00:00:00 EDT 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.59108· OSTI ID:703995

Guo, B N; Bouanani, M E; Duggan, J L; McDaniel, F D ^[1]; Doyle, B L

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1. Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States)

As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented. {copyright} {ital 1999 American Institute of Physics.}

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 703995
• Report Number(s): CONF-981122-; ISSN 0094-243X; TRN: 9919M0067
• Journal Information: AIP Conference Proceedings, Vol. 475, Issue 1; Conference: 15. international conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: PBD: Jun 1999
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CARBON
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
INTEGRATED CIRCUITS
CARBON 12 BEAMS
CHARGE DISTRIBUTION
ION SCATTERING ANALYSIS
MEV RANGE 01-10