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Title: Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.352354· OSTI ID:7038287
; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(Al{sub {ital y}}Ga{sub 1{minus}{ital y}})P alloys exhibiting direct band gaps (4.2 meV for InGaP).

DOE Contract Number:
AC04-76DP00789
OSTI ID:
7038287
Journal Information:
Journal of Applied Physics; (United States), Vol. 72:11; ISSN 0021-8979
Country of Publication:
United States
Language:
English