Study of electron irradiation-induced defects in Si layers

Journal Article · Wed Oct 01 00:00:00 EDT 1986 · Chin. Phys.; (United States)

OSTI ID:6997890

Feng-mei, Wu; Qi-ji, Lai; Bo, Shen; Guo-quan, Zhou

The experiments were done using a p/sup +/n junction irradiated with 12 MeV-electrons. Four electron traps were observed in Si layers: A-center E/sub 1/(E/sub c/-0.19 eV), the divacancy E/sub 2/ (E/sub c/-0.24 eV), and E/sub 4/ (E/sub c/ -0.44 eV), and E/sub 3/ defect level (E/sub c/ -0.37 eV). Using DLTS method in conjunction with the reverse recovery technique, annealing behaviors of E/sub 1/, E/sub 4/, and E/sub 3/ traps have been studied. The annealing temperature of the E/sub 3/ defect is the highest (approx. =520 /sup 0/C). We obtained an activation energy for thermal annealing of 1.71 eV with a frequency factor of --1.5 x 10/sup 9/ s/sup -1/. The E/sub 3/ and E/sub 4/ defect levels are the principal recombination centers that control the lifetime of the minority carrier following irradiation. As the E/sub 2/ and E/sub 4/ defect levels anneal out, the defect level E/sub 3/ becomes the dominant recombination center.

• Research Organization: Department of Physics, Nanjing University, Nanjing
• OSTI ID: 6997890
• Journal Information: Chin. Phys.; (United States), Vol. 6:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
SILICON
ELECTRON COLLISIONS
MEV RANGE 10-100
TRAPPED ELECTRONS
COLLISIONS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
JUNCTIONS
LEPTONS
MEV RANGE
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
360605* - Materials- Radiation Effects