Conductance fluctuations in hydrogenated amorphous silicon
Measurements of co-planar resistance fluctuations are reported for n-type doped hydrogenated amorphous silicon over the temperature range 190 < T < 450 K. The spectral density of the fluctuations obey a 1/f frequency dependence over the frequency range 1 < f < 10[sup 3] Hz. The noise power displays a non-linear dependence on the applied DC current, that is that noise power S[sub I] [proportional to] I[sup b], where 1.0 < b < 2.5. Random telegraph switching noise is observed with fluctuations as large as [delta]R/R [approx] 10[sup [minus]2] in samples with volumes of 10[sup [minus]7] cm[sup 3]. Statistical analysis of the noise power spectra show the fluctuations to be strongly non-Gaussian. The noise power magnitude and frequency dependence are both time dependent. These results suggest that cooperative dynamics govern the conductance fluctuations, and are discussed in terms of models for noise in composite and inhomogeneous materials.
- Research Organization:
- Minnesota Univ., Minneapolis, MN (United States)
- OSTI ID:
- 6987669
- Resource Relation:
- Other Information: Thesis (Ph.D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
ELECTRIC CONDUCTIVITY
AMORPHOUS STATE
DOPED MATERIALS
FLUCTUATIONS
FREQUENCY DEPENDENCE
HYDROGENATION
N-TYPE CONDUCTORS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
CHEMICAL REACTIONS
ELECTRICAL PROPERTIES
ELEMENTS
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SEMIMETALS
TEMPERATURE RANGE
VARIATIONS
360606* - Other Materials- Physical Properties- (1992-)