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Title: Room temperature x-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.322776· OSTI ID:6987549
;  [1]
  1. Politecnico di Milano (Italy). Dipartimento di Elettronica e Informazione

In this paper the authors present experimental results of X-ray spectroscopy performed with a small area (1 mm[sup 2]) silicon planar diode detector, operating at room and low (223 K) temperature. An ultra low noise preamplifier of new conception The Forward Bias FET Charge Amplifier'' is used with a commercial input JFET. These small area diodes detectors are suitable for X-ray imaging as the core of multichannel detectors, which are of great interest in many field of research and applications. The best performances in high resolution room temperature X-ray imaging are presently obtained with silicon CCD detectors, which on the contrary require an advanced technology to be produced and can work at relatively low count rate. In Section 2 the theoretical predictions of the resolution achievable with planar silicon diode detectors are shortly reviewed, in Section 3 the detector, the electronics and their assembly are described, in Section 4 the experimental results and the data analysis are presented and compared with the theoretical prediction.

OSTI ID:
6987549
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4Pt2; ISSN 0018-9499
Country of Publication:
United States
Language:
English