Structure of negatively charged muonium in {ital n}-type GaAs

Journal Article · Mon May 15 00:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.51.14762· OSTI ID:69492

Chow, K; Kiefl, R; MacFarlane, W; Schneider, J ^[1]; Cooke, D; Leon, M; Paciotti, M ^[2]; Estle, T; Hitti, B ^[3]; Lichti, R ^[4]; Cox, S ^[5]; Schwab, C ^[6]; Davis, E ^[7]; Morrobel-Sosa, A; Zavieh, L ^[8]

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1. TRIUMF and the Department of Physics, University of British Columbia, Vancouver, British Columbia, V6T 2A3 (Canada)
2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
3. Department of Physics, Rice University, Houston, Texas 77251-1892 (United States)
4. Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051 (United States)
5. Rutherford Appleton Laboratory, Chilton, Oxon OX11 0QX (United Kingdom)
6. Laboratoire de Physique et Applications des Semiconducteurs (UPR No. 292 du CNRS), Boite Postale 20, 67037 Strasbourg (France)
7. Department of Physics and Astronomy, University of Leicester, Leicester LEI 7RH (United Kingdom)
8. California Polytechnic State University, San Luis Obispo, California 93407 (United States)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped {ital n}-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the {l_angle}111{r_angle} direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

• OSTI ID: 69492
• Journal Information: Physical Review, B: Condensed Matter, Vol. 51, Issue 20; Other Information: PBD: 15 May 1995
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
GALLIUM ARSENIDES
NUCLEAR QUADRUPOLE RESONANCE
POLARIZED BEAMS
AMBIENT TEMPERATURE
DIAMAGNETISM
FERMI LEVEL
HYDROGEN IONS
ION IMPLANTATION
MUONIUM
N-TYPE CONDUCTORS
SILICON ADDITIONS
TELLURIUM ADDITIONS
TEMPERATURE DEPENDENCE