A radiation-hardened 10K-gate CMOS gate array
- Toshiba Corp., 1, Komukai-Toshiba-cho, Saiwai-Ku, Kawasaki, 210 (JP)
- lwate-Toshiba Electronics Corp., Kitakami, 024 (JP)
- TOSNEC, Kawasaki, 210 (JP)
This paper reports a radiation-hardened 10013-gate complementary metal-oxide-semiconductor (CMOS) gate array with a 5-V supply voltage designed and fabricated utilizing Si-gate Epi-CMOS technology with two-level metallization. N-channel metal-oxide-semiconductor (NMOS) and p-channel metal-oxide-semiconductor (PMOS) transistor gate lengths in basic cells are 2 {mu}m. A one hundred krad (Si) total dose radiation hardness has been realized by introducing a thin field oxide between the source/drain diffusion layers and a thick field oxide in NMOS transistors both in the basic cells and I/O cells, and the buried P+ diffusion layer under a poly-Si layer at the P-well edge in the basic cells, without sacrificing speed performance.
- OSTI ID:
- 6948248
- Report Number(s):
- CONF-890723-; CODEN: IETNA; TRN: 90-014141
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
36 MATERIALS SCIENCE
MOS TRANSISTORS
RADIATION HARDENING
SILICON
DESIGN
FABRICATION
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PERFORMANCE
ELEMENTS
HARDENING
MATERIALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)
360605 - Materials- Radiation Effects