Selective excitation and thermal quenching of the yellow luminescence of GaN

Journal Article · Mon Nov 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125322· OSTI ID:690682

Colton, J S; Yu, P Y ^[1]; Teo, K L ^[2]; Weber, E R ^[3]; Perlin, P; Grzegory, I ^[4]; Uchida, K ^[5]

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1. Department of Physics, University of California, Berkerley, California 94720 (United States)
2. Department of Electrical Engineering, National University of Singapore, (Singapore) 119260
3. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
4. UNIPRESS, High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland)
5. Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Choufugaoka, Choufu, Tokyo 182 (Japan)

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film {ital n}-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 690682
• Journal Information: Applied Physics Letters, Vol. 75, Issue 21; Other Information: PBD: Nov 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM COMPOUNDS
PHOTOLUMINESCENCE
GALLIUM NITRIDES
SEMICONDUCTOR MATERIALS
VISIBLE SPECTRA
THIN FILMS
CHEMICAL VAPOR DEPOSITION
MONOCRYSTALS
EXCITATION
PHONONS
LINE NARROWING