Magnetoresistance of one-dimensional subbands in tunnel-coupled double quantum wires

Journal Article · Fri Oct 01 00:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.11530· OSTI ID:688022

Moon, J S; Blount, M A; Simmons, J A; Wendt, J R; Lyo, S K; Reno, J L ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le}1-{mu}m-thick Al{sub x}Ga{sub 1{minus}x}As/GaAs double-quantum-well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 T is observed with a strong gate voltage dependence. The data are consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of one-dimensional subbands. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 688022
• Journal Information: Physical Review, B: Condensed Matter, Vol. 60, Issue 16; Other Information: PBD: Oct 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
MAGNETORESISTANCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
FERMI LEVEL
GATING CIRCUITS
SEMICONDUCTOR DEVICES
TUNNELING