Interphase interaction at indium phosphide contacts with metals of group 1
Journal Article
·
· Sov. Phys. J. (Engl. Transl.); (United States)
The interphase interaction at indium phosphide contacts with layers of metals of group I (Cu, Ag, Au) annealed in an atmosphere of oxygen is investigated using the method of Rutherford backscattering, x-ray structure analysis, and electrophysical measurements. The relation between the character of the interphase process and the behavior of the electrophysical parameters of the Schottky barriers is traced. The mechanism of degradation in the contacts mentioned is discussed.
- OSTI ID:
- 6870682
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Vol. 29:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHASE STUDIES
ANNEALING
BACKSCATTERING
COPPER
DIFFUSION
ELECTRICAL PROPERTIES
GOLD
INDIUM
N-TYPE CONDUCTORS
RUTHERFORD SCATTERING
SCHOTTKY BARRIER DIODES
SILVER
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
COHERENT SCATTERING
DIFFRACTION
ELASTIC SCATTERING
ELEMENTS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS
360603* - Materials- Properties
INDIUM PHOSPHIDES
PHASE STUDIES
ANNEALING
BACKSCATTERING
COPPER
DIFFUSION
ELECTRICAL PROPERTIES
GOLD
INDIUM
N-TYPE CONDUCTORS
RUTHERFORD SCATTERING
SCHOTTKY BARRIER DIODES
SILVER
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
COHERENT SCATTERING
DIFFRACTION
ELASTIC SCATTERING
ELEMENTS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS
360603* - Materials- Properties