Temperature dependent gain of the atomic xenon laser
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Illinois, Urbana, IL (United States)
Measured and calculated gain of the 1.73 {mu}m (5d(3/2){sub 1} - 6p(5/2){sub 2}) and 2.03 {mu}m (5d(3/2){sub 1} - 6p(3/2){sub 1}) atomic xenon transitions for gas temperatures between 290 K and 590 K are presented. Fission-fragment excitations was used to characterize the gain in several Ar/Xe, He/Ar/Xe and Ne/Ar/Xe gas mixtures at a pump power of 8 W/cm{sup 3}. For a constant gas density, the gain exhibits an approximately T{sub gas}{sup {minus}n} dependence with n between 2 and 3. The dominatant reactions for controlling gas temperature dependencies have been identified as dimer formation, dissociative recombination and their effects on electron density. The implications of these measurements and calculations on scaling and high temperature operation will be discussed.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 67875
- Report Number(s):
- CONF-9310400-; ISSN 0003-0503; TRN: 95:000870-0037
- Journal Information:
- Bulletin of the American Physical Society, Vol. 38, Issue 13; Conference: 46. annual gaseous electronics conference, Montreal (Canada), 19-22 Oct 1993; Other Information: PBD: Dec 1993
- Country of Publication:
- United States
- Language:
- English
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