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Title: The effect of crystal orientation on damage accumulation in chromium-implanted Al sub 2 O sub 3

Conference ·
OSTI ID:6784647
 [1]; ; ;  [2];  [3]
  1. Nano Instruments, Inc., Knoxville, TN (USA)
  2. Oak Ridge National Lab., TN (USA)
  3. Western Ontario Univ., London, ON (Canada)

Chromium-implantation of single crystal aluminium oxide (Al{sub 2}O{sub 3}) has been shown to be anisotropic with respect to damage accumulation. Ultra-low load indentation and Rutherford Backscattering Spectroscopy (RBS) have been used to demonstrate the dependence of radiation damage on fluence and crystal orientation. Single crystal Al{sub 2}O{sub 3} specimens of c-axis ((0001) normal to the surface) and a-axis ((1120) normal to the surface) orientations were ion-implanted simultaneously and found to possess different near-surface mechanical properties. Subsequent RBS-ion channeling examination indicated different amounts of disorder in both the aluminum and oxygen sublattices for the two orientations. These results imply a higher amorphization threshold in terms of implantation fluence for the a-axis oriented samples. 15 refs., 6 figs.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6784647
Report Number(s):
CONF-900623-11; ON: DE90012294; TRN: 90-021133
Resource Relation:
Conference: 15. symposium on effects of radiation on materials, Nashville, TN (USA), 17-21 Jun 1990
Country of Publication:
United States
Language:
English