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Title: Thin-film indium selenide prepared by reaction of selenium vapor with indium oxide

Journal Article · · Chemistry of Materials; (United States)
DOI:https://doi.org/10.1021/cm00024a053· OSTI ID:6772583

A new process involving two steps has been developed to prepare thin-film In[sub 2]Se[sub 3]. The first step is formation of indium oxide by spray pyrolysis of an aqueous solution of indium nitrate, and the second is reaction of this oxide with selenium vapor in nitrogen at atmospheric pressure to form In[sub 2]Se[sub 3]. Shorter exposure time was needed for complete conversion as the temperature was increased from 400 to 500[degree]C. Auger depth profiling of the composition of a partially converted film indicated that the conversion process appears to involve three steps: (a) reaction beteween selenium vapor and the oxide at the surface; (b) subsequent diffusion of selenium into the film until much of the oxide was converted to InSe; (c) further reaction involving selenium vapor and InSe to form In[sub 2]Se[sub 3]. It was possible to convert In[sub 2]Se[sub 3] into InSe by reacting it with indium vapor, and it was also possible to incorporate cadmium. p-type In[sub 2]Se[sub 3] and n-type InSe were prepared by this relatively inexpensive process. Resistance and Hall effect measurements gave a variety of resistivity and carrier density values, depending on the preparation conditions. X-ray diffraction indicated that the In[sub 2]Se[sub 3] film may consist of several crystalline phases, and optical absorption spectra indicated a direct bandgap of 1.84 eV. A direct bandgap of 3.64 eV was found for In[sub 2]O[sub 3], which was n-type and had a very low resistivity and high electron density. 35 refs., 5 figs., 2 tabs.

OSTI ID:
6772583
Journal Information:
Chemistry of Materials; (United States), Vol. 4:6; ISSN 0897-4756
Country of Publication:
United States
Language:
English