Chemical mechanical polishing: An enabling fabrication process for surface micromachining technologies
Chemical-Mechanical-Polishing (CMP), first used as a planarization technology in the manufacture of multi-level metal interconnects for high-density Integrated Circuits (IC), is readily adapted as an enabling technology in MicroElectroMechanical Systems (MEMS) fabrication, particularly polysilicon surface micromachining. The authors have demonstrated that CMP enhances the design and manufacturability of MEMS devices by eliminating several photolithographic definition and film etch issues generated by severe topography. In addition, CMP planarization readily allows multi-level polysilicon structures comprised of 4- or more levels of polysilicon, eliminates design compromise generated by non-planar topography, and provides an avenue for integrating different process technologies. A recent investigation has also shown that CMP is a valuable tool for assuring acceptable optical flatness of micro-optical components such as micromirrors. Examples of these enhancements include: an extension of polysilicon surface-micromachining fabrication to a 5-level technology, a method of monolithic integration of electronics and MEMS, and optically flat micromirrors.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 674602
- Report Number(s):
- SAND-98-1326C; CONF-981108-; ON: DE98007196; BR: DP0102021; TRN: AHC29820%%54
- Resource Relation:
- Conference: 194. meeting of the Electrochemical Society, Boston, MA (United States), 1-6 Nov 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
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