Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon

Journal Article · Sun Oct 01 00:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324416· OSTI ID:6706600

Wittmer, M; Roth, J; Revesz, P; Mayer, J W

The recrystallization of Ne- and Kr-implanted amorphous silicon layers has been studied. Investigation of the growth kinetics at temperatures between 525 and 575 /sup 0/C showed that the amorphous layer regrows completely. During annealing, 75% of the Ne diffused out while Kr out-diffusion could only be obtained by annealing the samples at 900 to 1000 /sup 0/C after complete regrowth had already been established. TEM analysis revealed Ne bubbles in the as-implanted samples. Bubbles and microtwins in the epitaxially regrown layers were found in the Ne-implanted samples and in some of the Kr-implanted samples. Microtwins were only detected when bubbles were simultaneously present.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6706600
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ANNEALING
BUBBLES
ELECTRON MICROSCOPY
EPITAXY
ION IMPLANTATION
KRYPTON IONS
LAYERS
NEON IONS
REACTION KINETICS
RECRYSTALLIZATION
TWINNING
CHARGED PARTICLES
ELEMENTS
HEAT TREATMENTS
IONS
KINETICS
MICROSCOPY
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects