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Title: Cuprous oxide photovoltaic cells

Conference ·
OSTI ID:6671855

Cuprous oxide, with a band gap of 2.0 eV, is an attractive material for solar cells because of low cost and great availability. The current conversion efficiency is 1%, but theoretical estimates are >13%. For various Schottky barriers, e.g., Al/Cu/sub 2/O, it is proposed that the V/sub oc/ is limited by chemical conversion of the junctions to Cu/Cu/sub 2/O junctions, and the model is supported by Auger and ESCA results. It is proposed to avoid the reaction by use of an oxide interlayer as in Al/Al/sub 2/O/sub 3//Cu/sub 2/O, which also gives an MIS structure, but only minimal success has yet been achieved with the methods tried. Sb/sub 2/O/sub 3/ and SiO/sub x/ layers were explored. Another approach could be to use oxide heterojunctions on Cu/sub 2/O. Several were explored and ZnO/Cu/sub 2/O was best. In and Cd are effective dopants for Cu/sub 2/O. With samples annealed at 500/sup 0/C, diffusion lengths of approximately 4 ..mu..m were measured by an SPV method. The spectral sensitivity of Cu/Cu/sub 2/O cells has a threshold at 630 nm and a maximum at 500 nm.

Research Organization:
Wayne State Univ., Detroit, MI (USA)
DOE Contract Number:
ET-78-S-02-4726
OSTI ID:
6671855
Report Number(s):
CONF-780619-16
Resource Relation:
Conference: IEEE photovoltaic specialists conference, Washington, DC, USA, 5 Jun 1978
Country of Publication:
United States
Language:
English