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Title: Ge segregation at Si-Ge (001) stepped surfaces

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032 (United States)
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Atomistic calculations using the Stillinger-Weber and Tersoff interatomic potentials are used to study the energetics of Si-Ge interchange at Si step edges on (001) Ge surfaces. The calculations indicate that Ge segregation at [ital S][sub [ital B]] rebonded step edges is energetically favored. This is consistent with the Ge-pump model of Jesson, Pennycook, and Baribeau [Phys. Rev. Lett. 66, 750 (1991)].

DOE Contract Number:
AC05-84OR21400
OSTI ID:
6668278
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 47:15; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
INTERATOMIC FORCES
MICROSTRUCTURE
SORPTIVE PROPERTIES
SILICON
CHEMISORPTION
EPITAXY
SEGREGATION
SUPERLATTICES
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
ELEMENTS
METALS
SEMIMETALS
SEPARATION PROCESSES
SORPTION
SURFACE PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)