c-axis inclined ZnO piezoelectric shear wave films

Journal Article · Tue Feb 15 00:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93930· OSTI ID:6630663

Wang, J S; Lakin, K M

This letter reports on the growth and characterization of ZnO films having c axis oriented 40/sup 0/ to the substrate normal. These films are of significant interest for shear wave generation for bulk wave delay lines and resonators. The films were grown on Si wafers or membranes under low pressure and high growth rate conditions in a reactive dc planar magnetron sputtering system having an auxiliary anode structure. Shear wave resonators were fabricated and used for film evaluation. A ZnO/Si composite resonator exhibited a Q of approximately 4600 at 293-MHz fundamental resonance. The effective coupling coefficient of the film alone was found to be 17% (k/sup 2/ = 0.029) using an edge-only supported ZnO plate resonator. The temperature coefficient of the ZnO resonator was found to be -36 ppm//sup 0/C and -20.5 ppm//sup 0/C for the composite structure.

• Research Organization: Microelectronics Research Center and Ames Laboratory, USDOE, Iowa State University, Ames, Iowa 50011
• OSTI ID: 6630663
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZINC OXIDES
PIEZOELECTRICITY
SHEAR
SOUND WAVES
DELAY CIRCUITS
FILMS
MAGNETRONS
MHZ RANGE
ORIENTATION
PERFORMANCE
PLATES
RESONATORS
SPUTTERING
SUBSTRATES
TEMPERATURE COEFFICIENT
CHALCOGENIDES
ELECTRICITY
ELECTRON TUBES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FREQUENCY RANGE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
REACTIVITY COEFFICIENTS
ZINC COMPOUNDS
360603* - Materials- Properties