Controlled surface crystallization of fused silica by Li/sup +/-ion implantation

Conference · Sun Jan 01 00:00:00 EST 1978

OSTI ID:6628685

Arnold, G W

In infrared reflection spectroscopy studies of ion-implanted fused silica, it was found that Li/sup +/-ion implantation altered the Si-O-Si bending mode in the Si-O-Si plane near 800 cm/sup -1/ so that this mode became similar to the corresponding mode in crystalline quartz. This study is extended, and it is found that controlled crystallization of fused silica surfaces can be achieved by annealing at temperatures near 750/sup 0/C following Li/sup +/-implantation. (GHT)

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 6628685
• Report Number(s): SAND-78-0936C; CONF-780932-3; TRN: 78-019879
• Resource Relation: Conference: Conference on ion beam modification of materials, Budapest, Hungary, 4 Sep 1978
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
CRYSTALLIZATION
ION IMPLANTATION
ANNEALING
CRYSTAL STRUCTURE
LITHIUM IONS
PHYSICAL RADIATION EFFECTS
QUARTZ
VERY HIGH TEMPERATURE
ATOMIC IONS
CHALCOGENIDES
CHARGED PARTICLES
HEAT TREATMENTS
IONS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
RADIATION EFFECTS
SILICON COMPOUNDS
360206* - Ceramics
Cermets
& Refractories- Radiation Effects