Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988
Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.
- Research Organization:
- North Carolina State Univ., Raleigh (USA). Dept. of Materials Science and Engineering
- OSTI ID:
- 6616248
- Report Number(s):
- AD-A-199055/5/XAB; NCSU/MTE-2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
GALLIUM NITRIDES
FILMS
LIGHT EMITTING DIODES
SEMICONDUCTOR LASERS
ELECTRONIC EQUIPMENT
ELECTRONS
HIGH TEMPERATURE
MICROWAVE EQUIPMENT
OPTICAL EQUIPMENT
PROGRESS REPORT
ULTRAVIOLET RADIATION
VELOCITY
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM COMPOUNDS
LASERS
LEPTONS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
360601* - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)