Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology
- Kyushu Inst. of Technology, Iizuka, Fukuoka (Japan)
- Univ. of Tokyo, Roppongi, Tokyo (Japan). Inst. of Solid State Physics
- Sandia National Labs., Albuquerque, NM (United States)
- Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
- Hitachi Cable, Ltd., Tsukuba, Ibaraki (Japan). Advanced Research Center
Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 658404
- Report Number(s):
- SAND-97-3155C; CONF-980729-; ON: DE98005452; TRN: AHC2DT06%%288
- Resource Relation:
- Conference: SPIE photonics Taiwan `98, Taipei (Taiwan, Province of China), 9-11 Jul 1998; Other Information: PBD: May 1998
- Country of Publication:
- United States
- Language:
- English
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