Gallium arsenide thin films on tungsten/graphite substrates: Phase II. Quarterly project report No. 3, March 1--May 31, 1978

Technical Report · Thu Jun 01 00:00:00 EDT 1978

OSTI ID:6567619

Chu, S S

The objectives of this research are to investigate thin films of gallium arsenide on tungsten/graphite substrates and to prepare solar cells with an AM1 efficiency of 6 percent or higher by August 1978. Efforts during this quarter have been directed to (1) the effects of the nature of substrate on the initial stage of the deposition process, (2) the effects of the addition of hydrogen chloride to the reactant mixture, (3) the fabrication and characterization of thin film gallium arsenide solar cells on tungsten/graphite substrates with both gold and silver as barrier metals, and (4) the investigation of the temperature coefficients and stabilities of thin film gallium arsenide MOS solar cells. The use of the reaction between gallium, hydrogen chloride, and arsine in a hydrogen flow has been continued for the deposition of gallium arsenide. The initial stage of the deposition of gallium arsenide on graphite and carbon/graphite substrates and the effects of the addition of hydrogen chloride to the reactant mixture on the deposition of gallium arsenide on tungsten/graphite substrates have been investigated by scanning electron microscopy. The fabrication and characterization of thin film gallium arsenide MOS solar cells with gold or silver as the barrier metal were carried out. At present, the best cell of 9 cm/sup 2/ area has an AMl efficiency of 6.5 percent. The temperature coefficients of thin film gallium arsenide MOS solar cell characteristics were investigated. Some preliminary studies on the stability of this type of solar cells have been carried out.

• Research Organization: Southern Methodist Univ., Dallas, TX (USA)
• DOE Contract Number: EY-76-C-03-1284
• OSTI ID: 6567619
• Report Number(s): SAN-1284-6
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
PERFORMANCE TESTING
GALLIUM ARSENIDES
DEPOSITION
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FILMS
GRAPHITE
MICROSTRUCTURE
POLYCRYSTALS
STABILITY
STRESSES
SUBSTRATES
TEMPERATURE EFFECTS
TUNGSTEN
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
GALLIUM COMPOUNDS
METALS
MICROSCOPY
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METALS
SOLAR CELLS
TESTING
TRANSITION ELEMENTS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture