Boron incorporation in epitaxial silicon using Si[sub 2]H[sub 6] and B[sub 2]H[sub 6] in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor
- North Carolina State Univ., Raleigh, NC (United States)
Boron incorporation in Si during Si epitaxy was studied in an ultrahigh-vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. The films were deposited using Si[sub 2]H[sub 6] and B[sub 2]H[sub 6] diluted in H[sub 2] as the reactive gases over a doping range from 1 [times] 10[sup 16] to 1 [times] 10[sup 19] cm[sup [minus]3]. The experiments were carried out in a temperature range of 650--800 C and a total pressure of 80 mTorr. The experimental results revealed a minimal effect of B[sub 2]H[sub 6] on the Si growth rate. Boron concentration in Si was found to be proportional to the B[sub 2]H[sub 6] flow rate and independent of the deposition temperature. This was found to be true even though the growth rate changed by a factor of five in the temperature range investigated. This is suggestive of a thermodynamic equilibrium between B in the gas phase and B on the growing Si surface. The results are consistent with the claim that B[sub 2]H[sub 6] dissociates as BH[sub 3] in the gas phase which chemisorbs on the growing Si surface. In this paper, the authors demonstrate that by UHV-RTCVD, retrograde doping profiles with sharp doping transitions and doped multilayers with a precise control over film thickness can be obtained. This is attributed to the cold-walled nature of the growth environment which eliminates the chamber memory effect typically observed in hot-wall reactors.
- OSTI ID:
- 6540676
- Journal Information:
- Journal of the Electrochemical Society; (United States), Vol. 142:1; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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BORON
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NONMETALS
ORGANIC COMPOUNDS
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360601* - Other Materials- Preparation & Manufacture