Optically pumped 1. 55-. mu. m double heterostructure Ga/sub x/Al/sub y/In/sub 1-x/-yAs/Al/sub u/In/sub 1-u/As lasers grown by molecular beam epitaxy

Journal Article · Tue Feb 01 00:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93906· OSTI ID:6535165

Alavi, K; Temkin, H; Wagner, W R; Cho, A Y

We report the first successful realization of room-temperature laser action at a wavelength of 1.55 ..mu..m in a new double heterostructure in which the active layer of Ga/sub x/Al/sub y/In/sub 1-x/-yAs is confined between two cladding layers of Al/sub u/In/sub 1-u/As. The structure was grown on InP by molecular beam epitaxy, and was pumped optically by a Q-switched yttrium aluminum garnet laser. Peak output power of up to 5 W was obtained at an incident power corresponding to four times that required for threshold without catastrophic degradation. Temperature dependence of the threshold power can be characterized by P/sub th/approx.exp(T/T/sub 0/) with T/sub 0/ = 60 /sup 0/C for 20 /sup 0/C< or =T< or =100 /sup 0/C.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6535165
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPTICAL PUMPING
ALUMINIUM ARSENIDES
ALUMINIUM OXIDES
CRYSTAL GROWTH
EPITAXY
EQUATIONS
FERRITE GARNETS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INFRARED RADIATION
MEDIUM TEMPERATURE
MOLECULAR BEAMS
POWER
Q-SWITCHING
TEMPERATURE DEPENDENCE
YTTRIUM COMPOUNDS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICATE MINERALS
TRANSITION ELEMENT COMPOUNDS
420300* - Engineering- Lasers- (-1989)