High-speed p + GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD
- Univ. of California, Santa Barbara (United States)
The authors report the high-frequency characteristics of a new type of InP-JFET having p + GaInAs as the gate material grown by MOCVD using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) as the alternative source for phosphine and arsine, respectively. Using selective wet chemical etching, heterojunction JFET's (HJFET's) with gate length of 0.6 [mu]m led to a unity current gain cutoff frequency and power gain cutoff frequency of 14.3 and 37.5 GHz, respectively. The large valence band discontinuity ([Delta]E[sub [upsilon]] [approx] 0.37 eV) considerably suppresses hole injection into the channel in the HJFET as compared to homojunction InP-JFET's, making the HJFET a preferred device for high-speed logic circuits based on JFET technology.
- OSTI ID:
- 6482699
- Journal Information:
- IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 14:2; ISSN 0741-3106
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
FIELD EFFECT TRANSISTORS
DESIGN
PERFORMANCE
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ETCHING
FABRICATION
GAIN
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LOGIC CIRCUITS
POWER SUPPLIES
RF SYSTEMS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
SURFACE FINISHING
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)