High-speed, high-current-gain P-n-p InP/InGaAs heterojunction bipolar transistors

Journal Article · Fri Jan 01 00:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215087· OSTI ID:6462498

Lunardi, L M; Chandrasekhar, S ^[1]; Hamm, R A ^[2]

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1. AT and T Bell Labs., Holmdel, NJ (United States)
2. AT and T Bell Labs., Murray Hill, NJ (United States)

P-n-p InP/InGaAs heterojunction bipolar transistors (HBT's) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum dc current gain values up to 420 for a base doping level of 4 [times] 10[sup 18] cm[sup [minus]3]. Small-signal measurements on self-aligned transistors with 3 [times] 8-[mu]m[sup 2] emitter area indicated the unity gain cutoff frequency value of 10.5 GHz and the inferred maximum frequency of oscillation of 25 GHz. The results clearly demonstrate the feasibility of complementary integrated circuits in the InP material system.

• OSTI ID: 6462498
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 14:1; ISSN 0741-3106
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JUNCTION TRANSISTORS
DESIGN
ELECTRICAL PROPERTIES
FABRICATION
FEASIBILITY STUDIES
GAIN
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
OPERATION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)