Positron annihilation investigation of radiation defects formed by proton bombardment of n-type GaAs
Precision measurements of the angular distribution of annihilation photons formed in n-type GaAs revealed a plateau in the range of low angles (0--2 mrad) of the angular distribution curves obtained for the (100) crystallographic direction. This plateau was due to the specific shape of the Brillouin zone of the diamond or zinc-blend lattice. Proton irradiation (dose 2 x 10/sup 15/ R/cm/sup 2/) modified the angular distribution curves so that they resembled an inverted parabola typical of polycrystalline samples. The initial form of the angular distribution curves was restored by isochronous annealing of the proton-irradiated samples. The annealing was a two-stage process indicating the presence of two types of radiation defects, which were removed by annealing at 250 and 450 /sup 0/C, respectively.
- Research Organization:
- Institute of Theoretical and Experimental Physics
- OSTI ID:
- 6428505
- Journal Information:
- Sov. Phys. - Solid State (Engl. Transl.); (United States), Vol. 23:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
ANGULAR DISTRIBUTION
ANNEALING
ANNIHILATION
CRYSTAL DEFECTS
EXPERIMENTAL DATA
ION COLLISIONS
N-TYPE CONDUCTORS
POSITRONS
PROTONS
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BASIC INTERACTIONS
COLLISIONS
CRYSTAL STRUCTURE
DATA
DISTRIBUTION
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
INFORMATION
INTERACTIONS
LEPTONS
MATERIALS
NUCLEONS
NUMERICAL DATA
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
360605* - Materials- Radiation Effects