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Title: Positron annihilation investigation of radiation defects formed by proton bombardment of n-type GaAs

Journal Article · · Sov. Phys. - Solid State (Engl. Transl.); (United States)
OSTI ID:6428505

Precision measurements of the angular distribution of annihilation photons formed in n-type GaAs revealed a plateau in the range of low angles (0--2 mrad) of the angular distribution curves obtained for the (100) crystallographic direction. This plateau was due to the specific shape of the Brillouin zone of the diamond or zinc-blend lattice. Proton irradiation (dose 2 x 10/sup 15/ R/cm/sup 2/) modified the angular distribution curves so that they resembled an inverted parabola typical of polycrystalline samples. The initial form of the angular distribution curves was restored by isochronous annealing of the proton-irradiated samples. The annealing was a two-stage process indicating the presence of two types of radiation defects, which were removed by annealing at 250 and 450 /sup 0/C, respectively.

Research Organization:
Institute of Theoretical and Experimental Physics
OSTI ID:
6428505
Journal Information:
Sov. Phys. - Solid State (Engl. Transl.); (United States), Vol. 23:1
Country of Publication:
United States
Language:
English