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Title: Application of the high-voltage electron microscope to quantitative defect-production studies using in-situ electrical-resistivity measurements

Conference ·
OSTI ID:6370526

There is no question of the great potential of the HVEM for in-situ studies, particularly in the field of radiation damage. The HVEM provides the best-defined experimental irradiation conditions that are available. However, the techniques for quantitatively studying in-situ defect production have lacked the sensitivity of the techniques (e.g., electrical resistivity) used in typical accelerator experiments. Now, side-entry type, single-tilt cryogenic specimen stage that has the capability of in-situ electrical resistivity measurements at T < 10 K in the Kratos-AEI EM7 1200-keV HVEM at Argonne National Laboratory (ANL) has been developed. This stage permits not only in-situ electrical resistivity measurements, but also insitu irradiation and observation of the same specimen. This technique has been applied to the determination of the threshold-energy surface for copper, the results of which are repored elsewhere in these proceedings.

Research Organization:
Argonne National Lab., IL (USA)
DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
6370526
Report Number(s):
CONF-800903-2; ON: DE81023887; TRN: 81-011446
Resource Relation:
Conference: 6. international conference on high voltage microscopy, Antwerp, Belgium, 1 Sep 1980
Country of Publication:
United States
Language:
English