Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films
- Laboratoire de Ceramique, Departement des Materiaux, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)
Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 {mu}C/cm{sup 2} and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5{center_dot}10{sup {minus}4} was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 10{sup 9} switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m{sup 4}/C{sup 2}. The electromechanical behavior of SBT films suggested no or weak contribution of non-180{degree} domain walls to the strain response. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 632521
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 14; Other Information: PBD: Oct 1997
- Country of Publication:
- United States
- Language:
- English
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