DLTS analysis and modeling of electron- and proton-irradiated (AlGa)As/GaAs multijunction solar cells. Final report, October 1985-October 1986

Technical Report · Sun Mar 01 00:00:00 EST 1987

OSTI ID:6296815

Li, S S

A numerical model was developed to calculate the displacement defects, the damage constant of minority-carrier diffusion length, and the degradation of short-circuit current (I/sub sc/), open circuit voltage (V/sub oc/) and conversion efficiency (eta/sub c/) in the 1-MeV electron- and proton-irradiated AlGaAs/GaAs/InGaAs multijunction solar cell under normal incidence conditions. The results show good agreement between calculated values and the experimental data of I/sub sc/, V/sub oc/ and eta/sub c/. In addition, DLTS analysis of defects in AlGaAs p-n junction solar cells irradiated by 1-MeV electrons has also been carried out in this work. The I-V analysis on several MOCVD-grown Ge/GaAs tunnel junction diodes has also been made in this study.

• Research Organization: Florida Univ., Gainesville (USA). Dept. of Electrical Engineering
• OSTI ID: 6296815
• Report Number(s): AD-A-180234/7/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
ALUMINIUM ARSENIDE SOLAR CELLS
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDE SOLAR CELLS
P-N JUNCTIONS
CHARGE CARRIERS
DAMAGE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
EFFICIENCY
GALLIUM ARSENIDES
GERMANIUM
JUNCTIONS
LENGTH
MATHEMATICAL MODELS
SPECTROSCOPY
TRANSIENTS
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
360605* - Materials- Radiation Effects
140501 - Solar Energy Conversion- Photovoltaic Conversion