Film etching by particles produced by a pulsed bulk discharge in CF/sub 4/

Journal Article · Tue Mar 01 00:00:00 EST 1988 · High Energy Chem. (Engl. Transl.); (United States)

OSTI ID:6293829

Korolev, Yu D; Mesyats, G A; Yarosh, A M

A pulsed bulk discharge in CF/sub 4/ has been used in plasmochemical film etching; discharges have been operated at pressures up to 13.3 kPa with running times not less than 10/sup -7/ sec and repetition frequencies up to 30 Hz, which have produced chemically active particles with high efficiency. It is best to place the specimen bearing the film outside the plasma zone behind a grounded grid electrode. One can select the gas pressure and the electrode gap to provide conditions where the particles reach the surface by diffusion, while bulk losses from recombination are slight.

• OSTI ID: 6293829
• Journal Information: High Energy Chem. (Engl. Transl.); (United States), Vol. 21:5; Other Information: Translated from Khim. Vys. Energ.; 21: No. 5, 464-468(Sep-Oct 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
CARBON TETRAFLUORIDE
GLOW DISCHARGES
PLASMA PRODUCTION
THIN FILMS
ETCHING
VANADIUM
CHEMICAL REACTORS
DIFFUSION
DISSOCIATION
ELECTRON-MOLECULE COLLISIONS
ENERGY EFFICIENCY
GAS DISCHARGE TUBES
IONIZATION
RECOMBINATION
WAVE FORMS
COLLISIONS
EFFICIENCY
ELECTRIC DISCHARGES
ELECTRON COLLISIONS
ELECTRON TUBES
ELEMENTS
FILMS
FLUORINATED ALIPHATIC HYDROCARBONS
HALOGENATED ALIPHATIC HYDROCARBONS
METALS
MOLECULE COLLISIONS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENTS
360102* - Metals & Alloys- Structure & Phase Studies
320303 - Energy Conservation
Consumption
& Utilization- Industrial & Agricultural Processes- Equipment & Processes