Stress-induced magnetic anisotropies in ion-implanted, contiguous-disk, magnetic bubble devices
The effect on magnetization of stress relaxation at edges of ion-implanted regions in contiguous-disk bubble devices is studied from a theoretical and an experimental vantage. The elastic and magnetostrictive model developed was used to explain the formation and behavior of charged walls that form at the edges of implanted patterns. It is realized that magnetic anisotropies arise at the edges that play a significant role in the nonuniform motion of the charged walls, which are used to propagate bubbles in these devices. Experimental evidence in the form of Bitter patterning and magneto-optic photometry is given for the presence of these large magnetic anisotropies near to implantation edges. Bitter patterns of the implantation edges of a (100) film illustrate that the effective anisotropy fields at the edges are greater than the demagnetizing fields. Newly discovered edge domains observed in a (111) film validate the theoretical model that predicted their presence.
- Research Organization:
- Carnegie-Mellon Univ., Pittsburgh, PA (USA)
- OSTI ID:
- 6286860
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MAGNETIC STORAGE DEVICES
ION IMPLANTATION
ANISOTROPY
DEMAGNETIZATION
FILMS
MAGNETIC DISKS
MAGNETIZATION
STRESS RELAXATION
MEMORY DEVICES
RELAXATION
420800* - Engineering- Electronic Circuits & Devices- (-1989)
990200 - Mathematics & Computers