Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers
The refractive index change caused by changes in the absorption edge of GaAs is determined by analysis of the spontaneous emission spectrum of a buried heterostructure window laser. The spontaneous emission spectrum is converted to a gain spectrum from which changes in the imaginary part of the refractive index can be calculated as the laser is excited from low current up to threshold. The real change in refractive index is then determined by a Kramers-Kronig transformation. The change in refractive index n' of the GaAs active layer is slightly sublinear with minority carrier density n/sub c/. At the laser line, including the calculated contribution of free carriers, ..delta..n' = -0.025 +- 0.005 and dn'/dn/sub c/ = -(1.8 +- 0.4) x 10/sup -20/ cm/sup 3/ in lasers with carrier densities at threshold estimated as 1.02 x 10/sup 18/ cm/sup -3/. Near threshold, the ratio of the change in the real index to the change in the imaginary index is about 6.2.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6285025
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 52:7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
REFRACTIVITY
SPECTRA
ABSORPTION
CARRIER DENSITY
CHARGE CARRIERS
EMISSION
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
KRAMERS-KRONIG CORRELATION
MATHEMATICAL MODELS
TRANSFORMATIONS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CORRELATIONS
DATA
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)