Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

Technical Report · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6284324

Yeh, Y C.M.; Chang, K I; Tandon, J

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

• Research Organization: Applied Solar Energy Corp., City of Industry, CA (USA)
• OSTI ID: 6284324
• Report Number(s): N-84-29311
• Resource Relation: Other Information: In NASA, Lewis Research Center, Space Photovoltaic Research and Technology, 1983, 18-24, N--84-29307 19-44
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
ADDITIVES
EFFICIENCY
LIQUID PHASE EPITAXY
MANUFACTURING
THICKNESS
DIMENSIONS
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion