Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211 (United States)
- Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
- School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
The heavy-hole and light-hole excitons of a CdTe epilayer, pseudomorphically grown on an InSb epilayer by molecular beam epitaxy, are studied with a diamond anvil cell as a function of applied hydrostatic pressure via photoluminescence (PL) and photomodulated reflectivity (PR) spectroscopies. They are compared with the excitonic features in the simultaneously measured PL spectra of a sample of bulk CdTe. Under applied pressure, the lattice mismatch-induced splitting between the light-hole and heavy-hole related transitions increases in a continuous and reversible manner because of the [ital additional] pressure-induced compression due to the difference in the compressibilities of CdTe and InSb. The unusually large strain sustained by the CdTe epilayer under pressure is discussed in the light of various models. The PR signal vanishes after the InSb epilayer goes through a structural phase transition at approximately 20 kbar, while the PL signal persists until it is irreversibly quenched by the CdTe epilayer undergoing a structural phase transition at approximately 30 kbar. For pressures between 20 and 30 kbar, the behavior of the CdTe epilayer is similar to that of the bulk sample; the strain appears to have been relaxed due to the structural phase transition which has taken place in InSb. Values of the first- and second-order pressure coefficients for bulk CdTe and for the CdTe epilayer as well as values of the hydrostatic and shear deformation potentials are obtained at 14 and 80 K and compared with previously quoted values.
- DOE Contract Number:
- FG02-89ER45402
- OSTI ID:
- 6265181
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 74:6; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM TELLURIDES
STRAINS
INDIUM ANTIMONIDES
EXCITONS
HOLES
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
REFLECTIVITY
VERY HIGH PRESSURE
ANTIMONIDES
ANTIMONY COMPOUNDS
CADMIUM COMPOUNDS
CHALCOGENIDES
EPITAXY
INDIUM COMPOUNDS
LUMINESCENCE
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SURFACE PROPERTIES
TELLURIDES
TELLURIUM COMPOUNDS
360603* - Materials- Properties