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Title: Axial-channeling studies of strained-layer superlattices

Conference ·
OSTI ID:6264254

Axial-channeling results are presented for the analysis of strained-layer superlattices (SLS), a broad new class of semiconductor materials with adjustable electronic properties. In/sub x/Ga/sub 1-x/As/GaAs periodic layer structures grown by molecular-beam epitaxy were analyzed by 2-MeV He-ion backscattering and channeling. Random spectra are used to obtain information on the layer thickness and composition. Channeled spectra and angular scans provide information on the lattice strain. The tetragonal distortions in the growth direction give rise to alternating tilts in inclined crystal rows at each interface. This results in significant dechanneling and narrowing of the angular scans along the (110) directions, but not along the (100) growth direction. Both the magnitude of the dechanneling with depth and the narrowing of the angular scans are directly related to the SLS lattice strain; theoretical calculations are required to determine the absolute magnitude of the strain. Results suggest the technique is sufficiently sensitive to detect lattice mismatches approx. = 0.2%, corresponding to lattice distortions of 0.01 A.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA); North Carolina Univ., Chapel Hill (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6264254
Report Number(s):
SAND-83-1194C; CONF-830570-4; ON: DE83013309
Resource Relation:
Conference: 6. international conference on ion beam analysis, Temple, AZ, USA, 22 May 1983
Country of Publication:
United States
Language:
English